Samsung 980 500Gb M.2 Nvme Internal Solid State Drive SSD

4064 EGP

Sequential Read speeds up to 3,500MB/s. Performance varies based on system hardware and configuration
Interface : PCIe 3.0 NVMe (PCIe Gen 3.0 x 4). Sequential writes up to 3000 MB/s. Samsung Pablo Controller
Form Factor : M.2 (2280)
Limited Warranty or 300 TBW Limited Warranty. Contact :1800 30 7267864
Designed for gamers, Mainstream PC users, Value maximizers. Form Factor : M.2 (2280),Designed for gamers, Mainstream PC users, Value maximizers.
Country Of Origin: Republic of Korea, China.(Originated from one of these countries)
Manufacturer 1 : Samsung (China) Semiconductor Co. Ltd.,#1999 North Xiaohe Rd. Xi’an, Shaanxi Province, 710100 China Manufacturer 2: Samsung Electronics Co., Ltd. Semiconductor Business Test & Package Center, #158 Baebang-Ro Baebang-Eup, Asan-city Chungcheongnam-Do, 31489 Republic of Korea
Packer 1 : Samsung (China) Semiconductor Co. Ltd.,#1999 North Xiaohe Rd. Xi’an, Shaanxi Province, 710100 China, Packer 2: Samsung Electronics Co., Ltd. Semiconductor Business Test & Package Center, #158 Baebang-Ro Baebang-Eup, Asan-city Chungcheongnam-Do, 31489 Republic of Korea

Out Of Stock.

رمز المنتج: 887276437231 التصنيفات: STORAGE, SSD الوسوم: 887276437231, MZ-V8V500, SAMSUNG 980 EVO 500GB M.2 NVMe INTERNAL SOILD STATE DRIVE العلامة التجارية: SAMSUNG

ApplicationClient PCs
Capacity500GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Form FactorM.2 (2280)
InterfacePCIe Gen 3.0 x4, NVMe 1.4
Dimension (WxHxD)80.15 x 22.15 x 2.38 (mm)
WeightMax 8.0 g Weight
Storage MemorySamsung V-NAND 3-bit MLC
ControllerSamsung Pablo Controller
Cache MemoryHMB(Host Memory Buffer)

TRIM SupportSupported
S.M.A.R.T SupportSupported
GC (Garbage Collection)Auto Garbage Collection Algorithm
Encryption SupportAES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
WWN SupportNot supported
Device Sleep Mode SupportYes

Sequential ReadUp to 3,100 MB/s * Performance may vary based on system hardware & configuration
Sequential WriteUp to 2,600 MB/s * Performance may vary based on system hardware & configuration
Random Read (4KB, QD32)Up to 400,000 IOPS* Performance may vary based on system hardware & configuration
Random Write (4KB, QD32)Up to 470,000 IOPS * Performance may vary based on system hardware & configuration
Random Read (4KB, QD1)Up to 17,000 IOPS * Performance may vary based on system hardware & configuration
Random Write (4KB, QD1)Up to 54,000 IOPS * Performance may vary based on system hardware & configuration

Average Power Consumption (system level)*Average: 4.3 W*Maximum: 5.9 W (Burst mode)* Actual power consumption may vary depending on system hardware & configuration
Power consumption (Idle)Max. 45 mW * Actual power consumption may vary depending on system hardware & configuration
Allowable Voltage3.3 V ± 5 % Allowable voltage
Reliability (MTBF)1.5 Million Hours Reliability (MTBF)
Operating Temperature0 – 70 ℃ Operating Temperature
Shock1,500 G & 0.5 ms (Half sine)