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Klevv Cras C930 1Tb Gen4 M2 Nvme With Heatsink Internal Solid State Drive SSD

⁦Klevv Cras C930 1Tb Gen4 M2 Nvme With Heatsink Internal Solid State Drive SSD⁩ - الصورة ⁦2⁩

⁦Klevv Cras C930 1Tb Gen4 M2 Nvme With Heatsink Internal Solid State Drive SSD⁩ - الصورة ⁦3⁩

⁦Klevv Cras C930 1Tb Gen4 M2 Nvme With Heatsink Internal Solid State Drive SSD⁩ - الصورة ⁦4⁩

⁦Klevv Cras C930 1Tb Gen4 M2 Nvme With Heatsink Internal Solid State Drive SSD⁩ - الصورة ⁦5⁩

⁦Klevv Cras C930 1Tb Gen4 M2 Nvme With Heatsink Internal Solid State Drive SSD⁩ - الصورة ⁦6⁩

Klevv Cras C930 1Tb Gen4 M2 Nvme With Heatsink Internal Solid State Drive SSD

5280 جنية

Optional Add-on Aluminum Heatsink Offering high-efficient attachable aluminum heatsink for user to freely install based on ones preference.
Performance Enhancing DRAM Cache Buffer Equipped with DRAM cache as a buffer to improve both speed performance & durability as a whole significantly.
Intelligent SLC Caching Algorithm Enhanced durability and read/write performance with the application of SLC caching technology.
S.M.A.R.T. for Condition Monitoring Maximize product stability through the built-in S.M.A.R.T. (Self-Monitoring, Analysis, and Reporting Technology).
LDPC ECC & Global Wear Leveling Provide satisfying data retention/protection and overall lifespan extension.
Powerful AES 256-bit Encryption Support AES 256-bit Hardware-based Encryption to ensure superior data security.

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رمز المنتج: 889600001620 التصنيفات: وحدات تخزين, إس إس دي الوسوم: INTERNAL SOILD STATE DRIVE, KLEVV, إس إس دي, Gen4, SOILD STATE DRIVE, HEATSINK, M2, CRAS C930, 1TB, M2 NVME, NVMe, INTERNAL العلامة التجارية: KLEVV

KLEVV CRAS C930 1TB GEN4 M2 NVME WITH HEATSINK INTERNAL SOILD STATE Drive

Host Interface	NVMe PCIe Gen4x4
Form Factor	M.2 2280
Capacity	1TB, 2TB
Controller	InnoGrit IG5236
Flash	Strictly-selected 3D TLC NAND Flash
Dimension	80(L) x 23.6(W) x 8.7(H) mm (with heatsink)
Weight	23g (with heatsink)

Performance

	1TB
Sequential Read up to (MB/s)	7400
Sequential Write up to (MB/s)	6400
4K Random Read up to (IOPS)	1000K
4K Random Write up to (IOPS)	1000K
Endurance (TBW)	750