Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high
or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate.
and is based on EEPROM technology. Toshiba began marketing in 1987.
which generally are much smaller than the entire device. NOR allows a single machine word to be written – to an erased location – or read